US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 5 for "Semiconductor memory devices and methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,629, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor memory devices and methods of manufacturing thereof" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Xinfeng, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device comprising a source, and a drain spaced apart from the source in a first direction. A channel layer is disposed radially outwards of at least one radially outer surface of the source and the drain in a second direction perpendicular to the first direction, the channel layer extending in the first direction. A memory layer is disposed ...