US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 5 for "Semiconductor memory device with spacer protection and method for forming same using multi-step patterning" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,838, issued on Aug. 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor memory device with spacer protection and method for forming same using multi-step patterning" was invented by Chih-Fan Huang (Kaohsiung, Taiwan), Po-Sheng Lu (Hsinchu, Taiwan), Chen-Chiu Huang (Taichung, Taiwan), Dian-Hau Chen (Hsinchu, Taiwan) and Yen-Ming Chen (Hsin-Chu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a magnetic tunnel junction (MTJ) stack over a substrate. The MTJ stack including a top magnetic layer, a barrier layer, and a bottom magnetic layer. The method also includes pa...