US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 5 for "Semiconductor device structure having air gap and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,113, issued on Aug. 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device structure having air gap and methods of forming the same" was invented by Ting-Ya Lo (Hsinchu, Taiwan), Cheng-Chin Lee (Taipei, Taiwan), Shao-Kuan Lee (Kaohsiung, Taiwan), Chi-Lin Teng (Taichung, Taiwan), Hsin-Yen Huang (New Taipei, Taiwan), Hsiaokang Chang (Hsinchu, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An interconnect structure is provided. The structure includes a dielectric layer, a first conductive feature disposed in the dielectric layer, a capping layer having a firs...