US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 5 for "Semiconductor device structure and methods of forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,676, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Semiconductor device structure and methods of forming the same" was invented by Jhon Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure includes a first S/D feature over a first device region of a substrate, a plurality of first semiconductor layers over the first device region of the substrate, and each first semiconductor layer is in contact with the first source/drain feature, a first gate electrode layer surrounding a portion of each first semiconductor layer, and a first dielectric spacer ...