ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,717, issued on Aug. 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method of forming thereof" was invented by Kuo-Cheng Ching (Zhubei, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Chih-Hao Wang (Baoshan Township, Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Aspects of the disclosure provide a semiconductor device and a method for forming the semiconductor device. The semiconductor device includes a first channel structure, a first gate dielectric layer surrounding the first channel structure, and...