US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 5 for "Self-align via structure by selective deposition" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,143, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Self-align via structure by selective deposition" was invented by Shao-Kuan Lee (Kaohsiung, Taiwan), Hsin-Yen Huang (New Taipei, Taiwan), Cheng-Chin Lee (Taipei, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan) and Shau-Lin Shue (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "In one embodiment, a self-aligned via is presented. In one embodiment, an inhibitor layer is selectively deposited on the lower conductive region. In one embodiment, a dielectric is selectively deposited on the lower conductive region. In one embodiment, the deposited ...