US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 5 for "Radical etching in gate formation" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,694, issued on Aug. 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Radical etching in gate formation" was invented by Wei-Yu Tsai (Hsinchu, Taiwan), Fu-Yao Nien (Hsinchu, Taiwan), Hong-Wei Huang (Hsinchu, Taiwan) and Chang-Sheng Lee (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, an isolation structure on the substrate, a fin protruding from the substrate and through the isolation structure, a gate stack engaging the fin, and a gate spacer on sidewalls of the gate stack. The gate spacer includes an inner sidewall facing the gate stack and an outer sidewa...