US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 5 for "Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cells" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,380,950, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Non-volatile static random access memory (NVSRAM) with multiple magnetic tunnel junction cells" was invented by Perng-Fei Yuh (Hsinchu, Taiwan), Yih Wang (Hsinchu, Taiwan), Ku-Feng Lin (New Taipei, Taiwan), Jui-Che Tsai (Tainan, Taiwan), Hiroki Noguchi (Hsinchu, Taiwan) and Fu-An Wu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein is an integrated circuit including multiple magnetic tunneling junction (MTJ) cells coupled to a static random access memory (SRAM). In one aspect, the integrated circuit includes a SRAM hav...