US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 5 for "Method of forming semiconductor device structure with gate structure" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,701, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method of forming semiconductor device structure with gate structure" was invented by Yi-Ching Huang (Taipei, Taiwan) and Tsung-Yu Chiang (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures and formation methods of a semiconductor device structure are provided. The method includes forming a first gate structure over a substrate, and the first gate structure includes a first metal electrode. The method includes forming a second gate structure adjacent to the first gate structure, and the second gate structure includes a seco...