US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 5 for "Method for removing resist layer, method of forming a pattern and method of manufacturing a package" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,379,665, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for removing resist layer, method of forming a pattern and method of manufacturing a package" was invented by Christine Y Ouyang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for removing a resist layer is provided. A resist layer is formed with a material comprising a metal oxide core with organic ligands. A chlorine-containing compound or a methyl group-containing compound is globally applied onto the resist layer to allow the chlorine-containing compound or the methyl group-containing compound to perform a ligand...