US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 5 for "Method for forming long channel back-side power rail device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,710, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Method for forming long channel back-side power rail device" was invented by Huan-Chieh Su (Tianzhong Township, Taiwan), Cheng-Chi Chuang (New Taipei, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan), Zhi-Chang Lin (Zhubei, Taiwan) and Li-Zhen Yu (New Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor transistor device. The method comprises forming a channel structure over a substrate and forming a first source/drain structure and a second source/drain structure on opposite sides of the fin structure. ...