ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,379,674, issued on Aug. 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Method and apparatus for improving critical dimension variation" was invented by Ming-Hsun Lin (Hsinchu, Taiwan), Yu-Hsiang Ho (Taichung, Taiwan), Chi-Hung Liao (New Taipei, Taiwan), Teng Kuei Chuang (Taichung, Taiwan) and Jhun Hua Chen (Changhua, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamin...