ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,622, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).
"Memory structure" was invented by Jhon-Jhy Liaw (Zhudong Township, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory structure includes a static random-access memory (SRAM) cell having a cell boundary. The SRAM cell includes a first write-port pull-up (PU) transistor and a second write-port PU transistor, a first write-port pull-down (PD) transistor, a second write-port PD transistor, a first write-port pass-gate (PG) transistor, a second write-port PG transistor, a first read-port PD transistor, a second read-port PD transistor, a fir...