ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,380,959, issued on Aug. 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Memory device and methods" was invented by Meng-Sheng Chang (Hsinchu, Taiwan) and Yao-Jen Yang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a bit line, a source line, a program word line, a read word line, a memory cell including a program transistor and a read transistor, and a controller. The program transistor includes a gate terminal coupled to the program word line, a first terminal coupled to the source line, and a second terminal. The read transistor includes a gate terminal coupled to the read ...