US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 5 for "Memory device and method for fabricating the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,640, issued on Aug. 5, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and method for fabricating the same" was invented by Ya-Ling Lee (Hsinchu, Taiwan), Wei-Gang Chiu (New Taipei, Taiwan), Yen-Chieh Huang (Changhua County, Taiwan), Han-Ting Tsai (Kaoshiung, Taiwan), Tsann Lin (Taipei, Taiwan), Yu-Ming Lin (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An integrated circuit device includes a ferroelectric layer that is formed with chlorine-free precursors. A ferroelectric layer formed according to the present teaching may be chlorine-free. Structures adj...