US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 5 for "Magnetic device and magnetic random access memory" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,841, issued on Aug. 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Magnetic device and magnetic random access memory" was invented by Ji-Feng Ying (Hsinchu, Taiwan), Jhong-Sheng Wang (Taichung, Taiwan) and Tsann Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A magnetic memory includes a first spin-orbital-transfer-spin-torque-transfer (SOT-STT) hybrid magnetic device disposed over a substrate, a second SOT-STT hybrid magnetic device disposed over the substrate, and a SOT conductive layer connected to the first and second SOT-STT hybrid magnetic devices. Each of the first and second SOT-STT ...