US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 5 for "Dielectric inner spacers in multi-gate field-effect transistors" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,692, issued on Aug. 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD (Hsinchu, Taiwan).

"Dielectric inner spacers in multi-gate field-effect transistors" was invented by I-Hsieh Wong (Hsinchu, Taiwan), Wei-Yang Lee (Taipei, Taiwan), Yen-Ming Chen (Hsin-Chu County, Taiwan) and Feng-Cheng Yang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a structure having a dummy gate stack over a fin protruding from a substrate. The fin includes an ML of alternating semiconductor layers and sacrificial layers. The method further includes forming a recess in an S/D region of the ML, forming a recess of t...