US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 5 for "Cuprous oxide devices and formation methods" (Swedish, Belgian Inventors)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,075, issued on Aug. 5, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Cuprous oxide devices and formation methods" was invented by Marcus Johannes Henricus van Dal (Linden, Belgium) and Peter Ramvall (Lund, Sweden).

According to the abstract* released by the U.S. Patent & Trademark Office: "Structures and methods of forming the same are provided. A structure according to the present disclosure includes an interconnect structure, an aluminum oxide layer over the interconnect structure, and a transistor formed over the aluminum oxide layer. The transistor includes cuprous oxide."

The patent was filed on May 13, 2024, under Application No. 18/662,267...