ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,343, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Work function tuning in semiconductor devices" was invented by Hsin-Yi Lee (Hsinchu, Taiwan), Sheng-Yung Chang (Hsinchu, Taiwan), Cheng-Lung Hung (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a method for forming a semiconductor device having a work function metal layer doped with tantalum to mitigate oxygen diffusion and improve device threshold voltage. The method includes forming a gate dielectric layer on a channel structure and forming a work function metal l...