US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Variable graduated capacitor structure and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,947, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Variable graduated capacitor structure and methods for forming the same" was invented by Jheng-Hong Jiang (Hsinchu, Taiwan), Shing-Huang Wu (Hsinchu, Taiwan) and Chia-Wei Liu (Zhubei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Devices and methods of manufacture for a graduated, "step-like," capacitance structure having two or more capacitors. A semiconductor structure comprising a capacitor structure, the capacitor structure comprising a first capacitor and a second capacitor. The first capacitor comprising a first bottom electrode and ...