US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Transistor gate structure and process" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,386, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Transistor gate structure and process" was invented by Hsiu-Ling Chen (Taoyuan, Taiwan), Chih-Teng Liao (Hsinchu, Taiwan), Jen-Chih Hsueh (Kaohsiung, Taiwan), Chen-Wei Pan (Zhubei, Taiwan) and Yu-Li Lin (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments include methods and devices which utilize dummy gate profiling to provide a profile of a dummy gate which has narrowing in the dummy gate. The narrowing causes a neck in the dummy gate. When the dummy gate is replaced in a gate replacement process, the necking provides co...