US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 26 for "Transistor gate profile optimization" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,402, issued on Aug. 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, South Korea).

"Transistor gate profile optimization" was invented by Chi-Sheng Lai (Hsinchu, Taiwan), Wei-Chung Sun (Hsinchu, Taiwan), Li-Ting Chen (Hsinchu, Taiwan), Kuei-Yu Kao (Hsinchu, Taiwan) and Chih-Han Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a plurality of fin structures that each protrude vertically upwards out of a substrate and each extend in a first direction in a top view. A gate structure is disposed over the fin structures. The gate structure extends in a second direction in the top view. The seco...