US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Three-dimensional ferroelectric memory device with width-differentiated channel and ferroelectric segments" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,320, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional ferroelectric memory device with width-differentiated channel and ferroelectric segments" was invented by Meng-Han Lin (Hsinchu, Taiwan) and Chia-En Huang (Xinfeng Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes a plurality of first memory cells disposed along a vertical direction. Each of the plurality of first memory cells includes a portion of a first channel segment that extends along the vertical direction and has a first sidewall and a second sidewall. The first and second sidewalls ...