US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Thin film transistor including a compositionally-modulated active region and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,358, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Thin film transistor including a compositionally-modulated active region and methods for forming the same" was invented by Wu-Wei Tsai (Hsinchu, Taiwan), Po-Ting Lin (Hsinchu, Taiwan), Hai-Ching Chen (Hsinchu, Taiwan) and Chung-Te Lin (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor includes an active layer and at least one gate stack. The active layer may be formed using multiple iterations of a unit layer stack deposition process, which includes an acceptor-type oxide deposition process and a post-transition ...