US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Static random access memory with magnetic tunnel junction cells" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,292, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Static random access memory with magnetic tunnel junction cells" was invented by Ping-Wei Wang (Hsinchu, Taiwan), Jui-Lin Chen (Taipei, Taiwan) and Yu-Kuan Lin (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed herein are related to a memory cell including magnetic tunneling junction (MTJ) devices. In one aspect, the memory cell includes a first layer including a first transistor and a second transistor. In one aspect, the first transistor and the second transistor are connected to each other in a cross-coupled configuration....