US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Semiconductor devices with interface between gate isolation structure and dummy channel having curved profile and methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,404, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices with interface between gate isolation structure and dummy channel having curved profile and methods of manufacturing thereof" was invented by Ya-Yi Tsai (Hsinchu, Taiwan), Wen-Shuo Hsieh (Taipei, Taiwan), Shu-Yuan Ku (Zhubei, Taiwan) and Chieh-Ning Feng (Taichung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first semiconductor fin and a second semiconductor fin extending along a first direction. The semiconductor device includes a dielectric fin, extending along the first direction,...