ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,383, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor devices and methods of manufacturing thereof" was invented by Shih-Yao Lin (New Taipei, Taiwan), Hsiaowen Lee (Hsinchu, Taiwan), Yu-Shan Cheng (Hsinchu, Taiwan) and Chao-Cheng Chen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating semiconductor devices includes forming a channel structure over a substrate and along a first lateral direction; forming a gate structure extending along a second lateral direction and straddling a portion of the channel structure; forming a gate spacer along a side of...