US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Semiconductor arrangement including first and second gate electrodes and method of manufacture" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,378, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan).

"Semiconductor arrangement including first and second gate electrodes and method of manufacture" was invented by Yun-Chi Wu (Tainan, Taiwan), Tsung-Yu Yang (Tainan, Taiwan), Cheng-Bo Shu (Tainan, Taiwan) and Chien Hung Liu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor arrangement includes forming a gate dielectric layer over a semiconductor layer. A gate electrode layer is formed over the gate dielectric layer. A first gate mask is formed over the gate electrode layer. The gate electrode...