US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 26 for "Near infrared light sensor with improved light coupling and CMOS image sensor including same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,422, issued on Aug. 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Near infrared light sensor with improved light coupling and CMOS image sensor including same" was invented by ChunHao Lin (Tainan, Taiwan), Yun-Wei Cheng (Taipei, Taiwan), Kuo-Cheng Lee (Tainan, Taiwan) and Chien Nan Tu (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A near infrared sensing device includes a near infrared light sensor configured to detect infrared light at least at a design-basis infrared wavelength, and a surface plasmon polariton structure including at least an embedded grating that is embedded in a light-r...