US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 26 for "Methods for manufacturing transistors" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,854, issued on Aug. 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Methods for manufacturing transistors" was invented by Po-Hsun Ho (Kaohsiung, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for making transistors with a semiconducting monolayer are disclosed. The semiconducting monolayer is covered with a hexagonal boron nitride (hBN) monolayer. A thin gate dielectric layer can then be formed upon the hBN monolayer using a plasma-enhanced deposition process, without the semiconducting monolayer being damaged by the plasma. The resulting structure maintains high mobility in the semiconducting ...