US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 26 for "Method for selectively removing predetermined part of selected element in semiconductor structure" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,869, issued on Aug. 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for selectively removing predetermined part of selected element in semiconductor structure" was invented by Chansyun David Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for treating a semiconductor structure includes: disposing the semiconductor structure in a chamber; introducing a modifying agent into the chamber to modify a surface part of a dielectric element; and introducing a removing agent into the chamber while applying an electromagnetic radiation with a selected frequency to the chamber so as to...