ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,400,713, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Memory cell" was invented by Jhon-Jhy Liaw (Zhudong Township, Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Memory cells are provided. A memory cell includes a first data storage cell, a second data storage cell and a match cell. The first data storage cell includes a first pull-down transistor, a first pull-up transistor and a first pass-gate transistor. The second data storage cell includes a second pull-down transistor, a second pull-up transistor, and a second pass-gate transistor. The match cell includes a first data t...