ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,372, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Insulating structures in semiconductor device" was invented by Tzu-Ging Lin (Kaohsiung, Taiwan) and Chen-Yu Tai (Miaoli County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a structure that provides insulation in a semiconductor device and a method for forming the structure. The structure includes a first isolation structure including a first isolation layer disposed on a substrate, a second isolation layer disposed on the first isolation layer, and a first high-k dielectric layer having a first height and...