ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,376, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"High-voltage nano-sheet transistor" was invented by Yu-Xuan Huang (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan), Ching-Wei Tsai (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsin-Chu, Taiwan) and Yih Wang (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to methods for the formation of high-voltage nano-sheet transistors and low-voltage gate-all-around transistors on a common substrate. The method includes forming a fin structure with first and second nano-sheet layers on the substrate. The method also in...