US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 26 for "Gap-insulated semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,407, issued on Aug. 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gap-insulated semiconductor device" was invented by Jung-Chien Cheng (Tainan, Taiwan), Chih-Hao Wang (Baoshan Township, Taiwan), Guan-Lin Chen (Hsinchu County, Taiwan), Shi Ning Ju (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan) and Kuan-Lun Cheng (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and the manufacturing method thereof are disclosed. An exemplary semiconductor structure according to the present disclosure includes a first base portion and a second base portion, an isolation fea...