US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "FinFET EPI channels having different heights on a stepped substrate" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,393, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"FinFET EPI channels having different heights on a stepped substrate" was invented by Cheng-Han Lee (New Taipei, Taiwan), Chih-Yu Ma (Hsinchu, Taiwan) and Shih-Chieh Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A structure includes a stepped crystalline substrate that includes an upper step, a lower step, and a step rise. A first fin includes a crystalline structure having a first lattice constant. The first fin is formed over the lower step. A second fin includes a crystalline structure having a second lattice constant, the...