US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 26 for "Epitaxial layer under a gate structure of a transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 26 -- United States Patent no. 12,402,379, issued on Aug. 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Epitaxial layer under a gate structure of a transistor" was invented by Chia-Ta Yu (New Taipei, Taiwan), Yen-Chieh Huang (Tainan, Taiwan), Yi-Hsien Tu (Hsinchu, Taiwan) and I-Hsieh Wong (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to methods for the fabrication of buried layers in gate-all-around (GAA) transistor structures to suppress junction leakage. In some embodiments, the method includes forming a doped epitaxial layer on a substrate, forming a stack of alternating first and second nano-s...