ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,371, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Three-state memory device" was invented by Mauricio Manfrini (Zhubei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to an integrated chip including a bottom electrode arranged within a dielectric layer. A memory element is directly over the bottom electrode and is arranged within the dielectric layer. A top electrode is directly over the memory element and is arranged within the dielectric layer. A conductive via is directly over the top electrode. A pair of lines that extend along opposing sidewalls of the t...