US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "Three-dimensional stackable ferroelectric random access memory devices and methods of forming" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,175, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Three-dimensional stackable ferroelectric random access memory devices and methods of forming" was invented by Meng-Han Lin (Hsinchu, Taiwan), Bo-Feng Young (Taipei, Taiwan), Han-Jong Chia (Hsinchu, Taiwan), Sheng-Chen Wang (Hsinchu, Taiwan), Feng-Cheng Yang (Zhudong Township, Taiwan), Sai-Hooi Yeong (Zhubei, Taiwan) and Yu-Ming Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a ferroelectric random access memory (FeRAM) device includes: forming a first layer stack and a second layer stack successively over a...