US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "Thin film transistor, semiconductor device and method of fabricating thin film transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,211, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Thin film transistor, semiconductor device and method of fabricating thin film transistor" was invented by Neil Quinn Murray (Hsinchu, Taiwan), Hung-Wei Li (Hsinchu, Taiwan), Mauricio Manfrini (Hsinchu County, Taiwan) and Sai-Hooi Yeong (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A thin film transistor, a semiconductor device having a thin film transistor and a method of fabricating a thin film transistor are provided. The thin film transistor includes a gate metal; a gate dielectric layer disposed on the gate metal; a s...