US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "Silicon intermixing layer for blocking diffusion" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,394,624, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Silicon intermixing layer for blocking diffusion" was invented by Chun-Chieh Wang (Kaohsiung, Taiwan), Yueh-Ching Pai (Taichung, Taiwan), Kuo-Jung Huang (Hsinchu, Taiwan) and Huai-Tei Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming an integrated circuit structure includes forming a gate dielectric on a wafer, forming a work function layer over the gate dielectric, depositing a capping layer over the work function layer, soaking the capping layer in a silicon-containing gas to form a silicon-containing layer...