US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "Semiconductor structure having a source/drain epitaxial stack with a non-crystalline layer therein" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,203, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor structure having a source/drain epitaxial stack with a non-crystalline layer therein" was invented by Wen-Hsien Tu (Hsinchu, Taiwan) and Wei-Fan Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure is directed to source/drain (S/D) epitaxial structures with enlarged top surfaces. In some embodiments, the S/D epitaxial structures include a first crystalline epitaxial layer comprising facets; a non-crystalline epitaxial layer on the first crystalline layer; and a second crystalline epitaxial layer ...