US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 19 for "Semiconductor structure and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,252, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure and method for forming the same" was invented by Jhu-Min Song (Nantou County, Taiwan), Chien-Chih Chou (New Taipei, Taiwan) and Yu-Chang Jong (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate, a first FET device and a second FET device. The substrate has a first region and a second region. The first FET device is in the first region, and the second FET device is in the second region. The first FET device includes a first isolation structure, a first gate elect...