US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 19 for "Semiconductor devices and methods for fabrication thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,210, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor devices and methods for fabrication thereof" was invented by Jhon Jhy Liaw (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An inner sidewall spacer is formed before the formation of the epitaxial source/drain features and an outer sidewall spacer is formed after the epitaxial source/drain features. The two-level sidewall spacer design increases volume of the epitaxial source/drain features, thus improving ion performance. The thicker sidewall spacers also reduce capacitance between source/drain contacts and the ga...