ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,256, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device including transistors sharing gates with structures having reduced parasitic circuit" was invented by Yi-Feng Chang (New Taipei, Taiwan), Po-Lin Peng (Taoyuan, Taiwan) and Jam-Wem Lee (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first to sixth regions, a first gate, a first metal contact and a second metal contact. The second region is disposed opposite to the first region with respect to the first gate. The first metal contact couples the first region to the second region. ...