US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 19 for "Semiconductor device having nanosheet transistor and methods of fabrication thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,226, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having nanosheet transistor and methods of fabrication thereof" was invented by Shu-Wen Shen (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The device includes a plurality of semiconductor layers vertically stacked, and a gate electrode layer comprising an upper portion disposed between two adjacent gate spacers, the upper portion having a first diameter. The gate electrode layer also includes a lower portion disposed below the upper portion including a first p...