US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 19 for "Semiconductor device fabrication methods and structures thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,248, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device fabrication methods and structures thereof" was invented by Chung-Wei Hsu (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu County, Taiwan), Mao-Lin Huang (Hsinchu, Taiwan), Lung-Kun Chu (New Taipei, Taiwan), Jia-Ni Yu (Hsinchu, Taiwan), Kuan-Lun Cheng (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes providing a first channel layer of a first transistor and a second channel layer of a second transistor over a substrate, forming a dipole layer over the f...