US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Aug. 19 for "Semiconductor device and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,235, issued on Aug. 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method for forming the same" was invented by Mahaveer Sathaiya Dhanyakumar (Hsinchu, Taiwan), Cheng-Ting Chung (Hsinchu, Taiwan), Chien-Hong Chen (Hsinchu County, Taiwan), Jin Cai (Hsinchu, Taiwan) and Chung-Wei Wu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a dielectric layer over a substrate; forming a carbon nanotube (CNT) over the dielectric layer; forming a dummy gate structure over the CNT; forming gate spacers on opposite sidewalls of the dummy gate structure;...