ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,209, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method" was invented by Shao-Yang Ma (Tainan, Taiwan), Cheng-Yen Wen (Taichung, Taiwan), Li-Li Su (ChuBei, Taiwan), Chii-Horng Li (Zhubei, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device including a seeding layer in the source/drain region and a method of forming is provided. The semiconductor device may include a plurality of nanostructures over a substrate, a gate structure wrapping around the plurality of nanostructures, a source/drain region adjacent the p...