US Patent Issued to Taiwan Semiconductor Manufacturing on Aug. 19 for "RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,396,222, issued on Aug. 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"RFSOI semiconductor structures including a nitrogen-doped charge-trapping layer and methods of manufacturing the same" was invented by Cheng-Ta Wu (Hsinchu, Taiwan) and Chiu Hua Chen (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor-on-insulator (SOI) substrate includes a handle substrate, a charge-trapping layer located over the handle substrate and including nitrogen-doped polysilicon, an insulating layer located over the charge-trapping layer, and a semiconductor material layer located over the insulating layer. The...